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 MMBT4403
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Features
* * * * Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT4401) Ideal for Medium Power Amplification and Switching Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 3)
E A C B B TOP VIEW E D G H K J L C
Mechanical Data
* * * * * * * * * Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe) Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate)
M
C
Dim A B C D E G H J K L M
B
E
SOT-23 Min Max 0.37 0.51 1.20 1.40 2.30 2.50 0.89 1.03 0.45 0.60 1.78 2.05 2.80 3.00 0.013 0.10 0.903 1.10 0.45 0.61 0.085 0.180 0 8 All Dimensions in mm
Maximum Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
@TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC PD RJA TJ, TSTG Value -40 -40 -5.0 -600 300 417 -55 to +150 Unit V V V mA mW C/W C
Characteristic
Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. Halogen and Antimony Free. 3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30058 Rev. 9 - 2
1 of 4 www.diodes.com
MMBT4403
(c) Diodes Incorporated
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4)
@TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min -40 -40 -5.0 30 60 100 100 20 -0.75 1.5 0.1 60 1.0 200 Max -100 -100 300 -0.40 -0.75 -0.95 -1.30 8.5 30 15 8.0 500 100 Unit V V V nA nA Test Condition IC = -100A, IE = 0 IC = -1.0mA, IB = 0 IE = -100A, IC = 0 VCE = -35V, VEB(OFF) = -0.4V VCE = -35V, VEB(OFF) = -0.4V IC = -100A, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -150mA, VCE = -2.0V IC = -500mA, VCE = -2.0V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0
-4
DC Current Gain
hFE
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
Notes: 4. Short duration pulse test used to minimize self-heating effect.
VCE(SAT) VBE(SAT)
V V
Cobo Cibo hie hre hfe hoe fT
pF pF k x 10 S MHz
VCE = -10V, IC = -1.0mA, f = 1.0kHz
VCE = -10V, IC = -20mA, f = 100MHz VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA
td tr ts tf
15 20 225 30
ns ns ns ns
1,000
350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 75 100 125 150 175 TA, AMBIENT TEMPERATURE (C) Fig. 1 Maximum Power Dissipation vs. Ambient Temperature 50 200
VCE = 5V
Note 1
TA = 150C
hFE, DC CURRENT GAIN
TA = 25C
100
T A = -50C
10
1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current
DS30058 Rev. 9 - 2
2 of 4 www.diodes.com
MMBT4403
(c) Diodes Incorporated
1.6
f = 1MHz
VCE, COLLECTOR-EMITTER VOLTAGE (V)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001
IC = 1mA
IC = 10mA IC = 100mA I = 300mA C IC = 30mA
CAPACITANCE (pF)
Cibo
Cobo
VR, REVERSE VOLTAGE (V) Fig. 3 Typical Capacitance
1 0.01 0.1 10 IB,BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region
100
0.5
VBE(ON), BASE-EMITTER VOLTAGE (V)
IC IB = 10
1.0
VCE = 5V
0.9 0.8 0.7 0.6
TA = 25C TA = -50C
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0.4
0.3
T A = 50C
0.2
T A = 150C
0.5 0.4 0.3 0.2 0.1
TA = 150C
0.1
TA = 25C
0 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Collector-Emitter Saturation Voltage vs. Collector Current
VCE = 5V
10 1 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Voltage vs. Collector Current
100
1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz)
100
10
1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current 1
DS30058 Rev. 9 - 2
3 of 4 www.diodes.com
MMBT4403
(c) Diodes Incorporated
Ordering Information
Device MMBT4403-7-F
Notes: 5.
(Note 5) Packaging SOT-23 Shipping 3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K2T = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
K2T
Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 2003 P May 5 2004 R Jun 6 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
YM
DS30058 Rev. 9 - 2
4 of 4 www.diodes.com
MMBT4403
(c) Diodes Incorporated


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